An Analysis of the Photo-Thermoelastic Waves Due to the Interaction between Electrons and Holes in Semiconductor Materials under Laser Pulses

In this paper, the interaction between holes and electrons in semiconductor media is analyzed based on existing mathematical–physical model. The elasto-thermodiffusion (ETD) theory, according to photothermal (PT) transport processes, has been used study model under impact of non-Gaussian laser pulse. A one-dimensional (1D) electronic/thermoelastic deformation described, detail, by governing field equations. equations are taken non-dimensional forms. established coupled elasticity plasma diffusion equations, moving To determine physical quantities problem analytically Laplace domain, some boundary conditions at free surface medium. inversion transform implemented using a numerical method obtain complete solutions time domain for basic fields involved. effects phase lag (relaxation time) temperature gradient, heat flux, pulses graphically obtained discussed comparison silicon germanium materials. wave behavior main semiconductors, optoelectronics thermoelastic represented.